IndiumV3, Russie, Analysis, bibRecord, 000587

Voltage distributions and nonoptical catastrophic mirror degradation in high power InGaAs/AlGaAs/GaAs lasers studied by Kelvin probe force microscopy

Identifieur interne : 000587 ( Russie/Analysis ); précédent : 000586; suivant : 000588

Voltage distributions and nonoptical catastrophic mirror degradation in high power InGaAs/AlGaAs/GaAs lasers studied by Kelvin probe force microscopy

Auteurs : RBID : Pascal:03-0016537

Descripteurs français

Pascal (Inist)
- 7321F, 8107S, 4255P, 4279B, 7867D, 8105E, 4260B, 8535B, 6837P, 6835B, 6865F, 6847F, Etude expérimentale, Indium composé, Aluminium composé, Gallium arséniure, Semiconducteur III-V, Laser puits quantique, Miroir laser, Microscopie force atomique, Topographie surface, Potentiel électrique, Hétérojonction semiconducteur, Puits quantique semiconducteur, Injection charge.

English descriptors

KwdEn :
- Aluminium compounds, Atomic force microscopy, Charge injection, Electric potential, Experimental study, Gallium arsenides, III-V semiconductors, Indium compounds, Laser mirrors, Quantum well lasers, Semiconductor heterojunctions, Semiconductor quantum wells, Surface topography.

Abstract

Kelvin probe force microscopy is used to observe the bulk potential redistribution across the high power InGaAs/AlGaAs/GaAs separate confinement heterostructure quantum-well laser diodes for a wide range of injection currents, including the lasing regime. By increasing the injection current, the development of a parasitic voltage drop is detected at initial calibration layers and the buffer layer of the laser structure. Catastrophic degradation of the laser mirror was observed at the level of injection current ∼19 times the threshold value. Atomic force microscopy images of the mirror revealed a 100 nm deep crater of maximum width ∼2.5 μm in the vicinity of the buffer/emitter interface. By combining the surface morphology results of the destructed mirror with those of Kelvin probe force microscopy in operating devices, it is concluded that the parasitic voltage drop is responsible for a substantial energy dissipation and the nonoptical degradation of the laser mirror. © 2003 American Institute of Physics.

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Pascal:03-0016537

Le document en format XML

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<front><div type="abstract" xml:lang="en">Kelvin probe force microscopy is used to observe the bulk potential redistribution across the high power InGaAs/AlGaAs/GaAs separate confinement heterostructure quantum-well laser diodes for a wide range of injection currents, including the lasing regime. By increasing the injection current, the development of a parasitic voltage drop is detected at initial calibration layers and the buffer layer of the laser structure. Catastrophic degradation of the laser mirror was observed at the level of injection current ∼19 times the threshold value. Atomic force microscopy images of the mirror revealed a 100 nm deep crater of maximum width ∼2.5 μm in the vicinity of the buffer/emitter interface. By combining the surface morphology results of the destructed mirror with those of Kelvin probe force microscopy in operating devices, it is concluded that the parasitic voltage drop is responsible for a substantial energy dissipation and the nonoptical degradation of the laser mirror. © 2003 American Institute of Physics.</div>
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Voltage distributions and nonoptical catastrophic mirror degradation in high power InGaAs/AlGaAs/GaAs lasers studied by Kelvin probe force microscopy

Voltage distributions and nonoptical catastrophic mirror degradation in high power InGaAs/AlGaAs/GaAs lasers studied by Kelvin probe force microscopy

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri